Method and apparatus for producing silicon single crystal
US5248378A · kind A · utility
46Cited by
6References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1992 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Mar 17, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.