Photostructuring process

US5250375A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Michael Sebald · Waischenfeld, DE
• Juergen Beck · Erlangen, DE
• Rainer Leuschner · Regensburg, DE
• Recai Sezi · Simmerath, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE
• Hellmut Ahne · Königsee, DE
• Eberhard Kuehn · Hemhofen, DE

Key dates

• Filing date: Dec 20, 1991
• Grant date: Oct 5, 1993
• Expiry date: Dec 20, 2011

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/405
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A process for producing structures in the submicron range is characterized by the following steps: PA1 a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate; PA1 the photoresist layer is dried; PA1 the photoresist layer is exposed in an imagewise manner; PA1 the exposed photoresist layer is subjected to a temperature treatment; PA1 the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; and PA1 the photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.