Method of fabricating integrated resistors in high density substrates
US5254493A · kind A · utility
35Cited by
39References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1992 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Feb 24, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/136
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for fabricating integrated resistors in high density interconnect substrates for multi-chip modules. In addition, the resistor material can be converted selectively into an insulator for optionally allowing for the simultaneous fabrication of integrated resistors and capacitors in relatively few steps. The process is well suited for copper/polyimide substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.