Method of depositing high density titanium nitride films on semiconductor wafers
US5254499A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1992 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Jul 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer. The method comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) heating the positioned wafer to a selected processing temperature of from about 200.degree. C. to about 600.degree. C.; c) injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR.sub.2).sub.4, where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and d) maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which comprises TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure. Preferably and typically, the resultant film will consist essentially of TiN, with the film having i…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.