Scott Meikle
130Patents
36h-index
27Co-inventors
86Inventor score
Filing activity: Jan 31, 1992 → Mar 24, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5302233A | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) | Performing Operations; Transporting | 384 | Expired |
| US5413941A | Optical end point detection methods in semiconductor planarizing polishing processes | Physics | 270 | Expired |
| US5449314A | Method of chimical mechanical polishing for dielectric layers | Electricity | 169 | Expired |
| US5439551A | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes | Performing Operations; Transporting | 162 | Expired |
| US5341016A | Low resistance device element and interconnection structure | Emerging Cross-Sectional Technologies | 160 | Expired |
| US5795495A | Method of chemical mechanical polishing for dielectric layers | Electricity | 154 | Expired |
| US6250994A | Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads | Electricity | 150 | Expired |
| US5655951A | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers | Physics | 148 | Expired |
| US6206756A | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad | Electricity | 147 | Expired |
| US6273786A | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad | Electricity | 144 | Expired |
| US6331488A | Planarization process for semiconductor substrates | Electricity | 112 | Expired |
| US5980363A | Under-pad for chemical-mechanical planarization of semiconductor wafers | Emerging Cross-Sectional Technologies | 106 | Expired |
| US5795218A | Polishing pad with elongated microcolumns | Emerging Cross-Sectional Technologies | 106 | Expired |
| US5871392A | Under-pad for chemical-mechanical planarization of semiconductor wafers | Emerging Cross-Sectional Technologies | 102 | Expired |
| US6313038A | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates | Electricity | 99 | Expired |
| US5395801A | Chemical-mechanical polishing processes of planarizing insulating layers | Electricity | 97 | Expired |
| US6206759A | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines | Emerging Cross-Sectional Technologies | 96 | Expired |
| US5609718A | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers | Physics | 95 | Expired |
| US6331135A | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives | Emerging Cross-Sectional Technologies | 92 | Expired |
| US5377429A | Method and appartus for subliming precursors | Performing Operations; Transporting | 90 | Expired |
| US5691235A | Method of depositing tungsten nitride using a source gas comprising silicon | Electricity | 88 | Expired |
| US5989470A | Method for making polishing pad with elongated microcolumns | Emerging Cross-Sectional Technologies | 82 | Expired |
| US6358122B1 | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives | Emerging Cross-Sectional Technologies | 79 | Expired |
| US5801066A | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers | Physics | 75 | Expired |
| US5254499A | Method of depositing high density titanium nitride films on semiconductor wafers | Electricity | 73 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.