Method for determining interface properties of semiconductor materials by photoreflectance
US5255070A · kind A · utility
12Cited by
3References
4Claims
0Family size
Inventors
Key dates
| Filing date | Jul 20, 1989 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Jul 20, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8461
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining information about properties at interfaces of semi-conductor materials in which a probe bean monochromatic light is directed onto a material sample which is itself electromodulated by a modulated pump beam, whereby the light reflected from the sample is detected to produce a d.c. signal and an a.c. signal, and after normalizing the procedure, the shifts of energy gaps in the band gaps are evaluated to obtain information about at least one externally applied parameter crossing such shift.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.