Semiconductor surface resistivity probe with semiconductor temperature control
US5260668A · kind A · utility
23Cited by
12References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1992 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Jun 11, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R27/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The resistivity of the surface of a semiconductor wafer is measured at different temperatures to determine the resistivity as a function of temperature. The temperature of the semiconductor wafer is varied by a heater in thermal contact with the semiconductor wafer, and the temperature is measured by a temperature sensor in thermal contact with the semiconductor. The heater is controlled by a control unit which adjusts the amount of heat provided by the heater, thereby controlling the temperature at which a measurement from a four-point resistivity probe is taken.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.