Method for producing a resist structure

US5262283A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Recai Sezi · Simmerath, DE
• Horst Borndorfer · Erlangen, DE
• Eva Rissel · Forchheim, DE
• Rainer Leuschner · Regensburg, DE
• Michael Sebald · Waischenfeld, DE
• Hellmut Ahne · Königsee, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE

Key dates

• Filing date: Apr 26, 1991
• Grant date: Nov 16, 1993
• Expiry date: Apr 26, 2011

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/039
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

High resolution resist structures with steep edges are obtained using standard equipment, with high sensitivity, particularly in the deep UV range. A photoresist layer consisting of a polymer having anhydride groups and blocked imide- or phenolic hydroxyl groups and of a photoactive component which forms a strong acid during irradiation is first deposited on a substrate, followed by irradiation with a patterned image. The irradiated photoresist layer is then treated with a water-based or a water-alcohol-based solution of a polyfunctional amino- or hydroxy-siloxane, and is etched in an oxygen-containing plasma.