Drain power supply
US5263000A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1992 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Oct 22, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A drain power supply for generating and supplying a regulated positive potential to drain regions of selected memory cells via bit lines in an array of flash EEPROM memory cells during programming includes charge pump means (20) formed of a plurality of charge pump sections (20a-20h) driven by one of a plurality of staggered clock signals for generating a moderately high level positive voltage. Cancellation means (26, 28) are coupled to each of the plurality of charge pump sections for effectively canceling out threshold voltage drops in the charge pump circuit. A regulator circuit (22) responsive to the regulated positive potential at an output node and a reference voltage is provided for generating a control voltage so as to control the high level positive voltage on the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.