Johnny C. Chen
37Patents
18h-index
27Co-inventors
81Inventor score
Filing activity: Sep 18, 1984 → Feb 1, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5867430A | Bank architecture for a non-volatile memory enabling simultaneous reading and writing | Physics | 125 | Expired |
| US6331950A | Write protect input implementation for a simultaneous operation flash memory device | Physics | 71 | Expired |
| US5291446A | VPP power supply having a regulator circuit for controlling a regulated positive potential | Electricity | 70 | Expired |
| US5263000A | Drain power supply | Physics | 62 | Expired |
| US5644531A | Program algorithm for low voltage single power supply flash memories | Physics | 55 | Expired |
| US5841696A | Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path | Physics | 53 | Expired |
| US5349558A | Sector-based redundancy architecture | Physics | 53 | Expired |
| US6275894A | Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture | Physics | 39 | Expired |
| US5612921A | Low supply voltage negative charge pump | General | 35 | Revoked |
| US6662262B1 | OTP sector double protection for a simultaneous operation flash memory | Physics | 34 | Expired |
| US5708387A | Fast 3-state booster-circuit | Electricity | 34 | Expired |
| US5282170A | Negative power supply | Physics | 30 | Expired |
| US5359558A | Flash eeprom array with improved high endurance | Physics | 26 | Expired |
| US5973979A | Low supply voltage negative charge pump | Electricity | 25 | Expired |
| US6005803A | Memory address decoding circuit for a simultaneous operation flash memory device with a flexible bank partition architecture | Physics | 23 | Expired |
| US5650966A | Temperature compensated reference for overerase correction circuitry in a flash memory | Physics | 20 | Expired |
| US5406517A | Distributed negative gate power supply | Physics | 18 | Expired |
| US5311385A | Magnetoresistive head with integrated bias and magnetic shield layer | Physics | 18 | Expired |
| US4646269A | Multiple programmable initialize words in a programmable read only memory | Physics | 17 | Expired |
| US6033955A | Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture | Physics | 17 | Expired |
| US5995415A | Simultaneous operation flash memory device with a flexible bank partition architecture | Physics | 15 | Expired |
| US6178129A | Separate output power supply to reduce output noise for a simultaneous operation | Physics | 13 | Expired |
| US6463516B1 | Variable sector size for a high density flash memory device | Physics | 13 | Expired |
| US5373408A | Configuring domain pattern in thin films of magnetic heads | Physics | 12 | Expired |
| US5376835A | Power-on reset circuit | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.