Method of forming uniformly thin, isolated silicon mesas on an insulating substrate
US5264387A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1992 |
| Grant date | Nov 23, 1993 |
| Priority date | — |
| Expiry date | Oct 27, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprising the steps of: providing a substrate including an insulator material having a generally planar surface; forming a plurality of mesas of a semiconductor material on the substrate surface, the plurality of mesas spaced by channels extending to the substrate surface, the plurality of mesas including device mesas and dummy mesas; forming a polish-stop structure of at least one selected material over the substrate surface in the channels; polishing the plurality of mesas and stopping on the polish-stop structure whereby the plurality of mesas have the same thickness as the polish-stop structure; and replacing the dummy mesas with an insulator material whereby to electrically isolate the device mesas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.