Low-current polysilicon fuse
US5264725A · kind A · utility
49Cited by
10References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1992 |
| Grant date | Nov 23, 1993 |
| Priority date | — |
| Expiry date | Dec 7, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A submicron-width fuse element is disclosed that protects peripheral DRAM chip devices from low current failures below the range of metal fuse elements. In a specific application, the fuse elements are used to protect a DRAM chip from dielectric failure of voltage supply filtering capacitors. A low cross-section and length allows minimum space for the element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.