Semiconductor integrated circuit device having superconductive layer and isolation member with nitride isolation
US5266815A · kind A · utility
13Cited by
4References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1992 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Apr 6, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Technology for using a wiring of a superconductive material in semiconductor integrated circuit device. An isolation layer and/or a barrier layer are provided for preventing diffusion of harmful composition of the superconductive material for the semiconductor device. Control of a circuit can be made utilizing the characteristics of a superconductive material. Also, the characteristics of a superconductive material may be controlled. A method of forming a layer of superconductive material, well compatible with the widely used process of manufacturing integrated circuit devices, is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.