Reading device for EPROM memory cells with the operational field independent of the threshold jump of the written cells with respect to the virgin cells
US5267202A · kind A · utility
17Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1991 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Jul 5, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The device comprises a source bias generator suitable for conferring upon the EPROM cell during the reading step a source voltage that varies linearly with the power supply voltage so as to keep constant the voltage between gate and source of the above cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.