Substrate processing apparatus
US5267607A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 1992 |
| Grant date | Dec 7, 1993 |
| Priority date | — |
| Expiry date | May 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering apparatus having a heating susceptor in a vacuum chamber to support a wafer. The wafer is fixed on a ring-shaped projection by clamps at wafer-mounted section on the top of the susceptor. A substantially closed space is formed between the underside of the wafer and that face on the top of the susceptor which is defined by the wafer-mounted section to oppose the underside of the wafer. Ar gas which serves as heat-medium gas is supplied into the closed space, flowing into it from its peripheral area. The Ar gas is exhausted at the center of the closed space by a vacuum pump. Heat is transmitted from the susceptor of the wafer through the Ar gas to set the wafer at a certain temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.