Method of adjusting the temperature of a semiconductor wafer
US5270266A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1992 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Dec 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of adjusting the temperature of a semiconductor wafer comprising mounting and attracting the wafer on a susceptor in a process chamber, exhausting and decompressing the process chamber, controlling the temperature of the wafer to become equal to a process temperature while cooling or heating the susceptor, supplying process gas into the chamber to process the wafer with this process gas, and introducing CF.sub.4 gas into interstices between the wafer and the susceptor through the susceptor to allow heat exchange to be achieved between them. CF.sub.4 gas includes same components as at least some of those of the process gas and it is more excellent in heat transmitting characteristic than helium gas. Even when CF.sub.4 gas is leaked into a process area, therefore, any influence is not added to the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.