Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5271972A · kind A · utility
373Cited by
2References
5Claims
0Family size
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Key dates
| Filing date | Aug 17, 1992 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Aug 17, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing good quality thermal CVD silicon oxide layers over a PECVD TEOS/oxygen silicon oxide layer comprising forming an interstitial layer by ramping down the power in the last few seconds of the PECVD deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.