Robert Robertson
27Patents
16h-index
29Co-inventors
81Inventor score
Filing activity: Jun 16, 1975 → Feb 28, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5271972A | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity | Electricity | 373 | Expired |
| US5366585A | Method and apparatus for protection of conductive surfaces in a plasma processing reactor | Emerging Cross-Sectional Technologies | 319 | Expired |
| US5589233A | Single chamber CVD process for thin film transistors | Emerging Cross-Sectional Technologies | 92 | Expired |
| US6024044A | Dual frequency excitation of plasma for film deposition | Chemistry; Metallurgy | 88 | Expired |
| US5399387A | Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates | Chemistry; Metallurgy | 78 | Expired |
| US6055927A | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology | Chemistry; Metallurgy | 57 | Expired |
| US4068938A | Electrostatic color printing utilizing discrete potentials | Physics | 33 | Expired |
| US6355108B1 | Film deposition using a finger type shadow frame | Electricity | 33 | Expired |
| US5851602A | Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5380566A | Method of limiting sticking of body to susceptor in a deposition treatment | Chemistry; Metallurgy | 27 | Expired |
| US6338874B1 | Method for multilayer CVD processing in a single chamber | Electricity | 26 | Expired |
| US5902650A | Method of depositing amorphous silicon based films having controlled conductivity | Chemistry; Metallurgy | 25 | Expired |
| US6444277B1 | Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates | Electricity | 24 | Expired |
| US5861197A | Deposition of high quality conformal silicon oxide thin films on glass substrates | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5359445A | Fiber optic sensor | Physics | 18 | Expired |
| US5441768A | Multi-step chemical vapor deposition method for thin film transistors | Electricity | 17 | Expired |
| US6902682B2 | Method and apparatus for electrostatically maintaining substrate flatness | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6172322A | Annealing an amorphous film using microwave energy | Chemistry; Metallurgy | 14 | Expired |
| US6294219A | Method of annealing large area glass substrates | Chemistry; Metallurgy | 11 | Expired |
| US6610374B2 | Method of annealing large area glass substrates | Chemistry; Metallurgy | 9 | Expired |
| US7438228B2 | Systems and methods for managing electronic prescriptions | Physics | 9 | Active |
| US6177023A | Method and apparatus for electrostatically maintaining substrate flatness | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6500265B1 | Apparatus for electrostatically maintaining subtrate flatness | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5567476A | Multi-step chemical vapor deposition method for thin film transistors | Electricity | 6 | Expired |
| US6352910B1 | Method of depositing amorphous silicon based films having controlled conductivity | Chemistry; Metallurgy | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.