Positive photoresist system for near-UV to visible imaging
US5272042A · kind A · utility
48Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1991 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Sep 17, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/127
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.