Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer

US5278433A · kind A · utility

Assignees

• TOYODA GOSEI CO., LTD. · JP
• KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO · JP
• NAGOYA UNIVERSITY · JP
• Research Development Corporation of Japan · JP

Inventors

• Katsuhide Manabe · Ichinomiya, JP
• Akira Mabuchi · Nagoya, JP
• Hisaki Kato · Hamamatsu, JP
• Michinari Sassa · Miyoshi, JP
• Norikatsu Koide · Nara, JP
• Shiro Yamazaki · Fukushima, JP
• Masafumi Hashimoto · Tokyo, JP
• Isamu Akasaki · Nagoya, JP

Key dates

• Filing date: Aug 7, 1992
• Grant date: Jan 11, 1994
• Expiry date: Aug 7, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-co…