Hisaki Kato
39Patents
15h-index
37Co-inventors
81Inventor score
Filing activity: Apr 1, 1988 → Mar 26, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5122845A | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode | Electricity | 137 | Expired |
| US5620557A | Sapphireless group III nitride semiconductor and method for making same | Emerging Cross-Sectional Technologies | 99 | Expired |
| US5278433A | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer | Electricity | 60 | Expired |
| US6005258A | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities | Electricity | 53 | Expired |
| US6265726A | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Electricity | 47 | Expired |
| US6423984B1 | Light-emitting semiconductor device using gallium nitride compound semiconductor | Electricity | 43 | Expired |
| US7138286B2 | Light-emitting semiconductor device using group III nitrogen compound | Electricity | 41 | Expired |
| US5733796A | Light-emitting semiconductor device using gallium nitride group compound | Electricity | 38 | Expired |
| US5650641A | Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device | Electricity | 38 | Expired |
| US5604763A | Group III nitride compound semiconductor laser diode and method for producing same | Electricity | 36 | Expired |
| US6362017B1 | Light-emitting semiconductor device using gallium nitride group compound | Electricity | 35 | Expired |
| US5905276A | Light emitting semiconductor device using nitrogen-Group III compound | Electricity | 22 | Expired |
| US6617668B1 | Methods and devices using group III nitride compound semiconductor | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5007718A | Electrochromic elements and methods of manufacturing and driving the same | Physics | 19 | Expired |
| US5481158A | Electron multiplier with improved dynode geometry for reduced crosstalk | Electricity | 17 | Expired |
| US6881651B2 | Methods and devices using group III nitride compound semiconductor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7922439B2 | Industrial robot | Emerging Cross-Sectional Technologies | 13 | Active |
| US7623243B2 | Spectroscopic device | Physics | 11 | Expired |
| US6853009B2 | Light-emitting semiconductor device using gallium nitride compound semiconductor | Electricity | 10 | Expired |
| US6249012A | Light emitting semiconductor device using gallium nitride group compound | Electricity | 7 | Expired |
| US5719390A | Photodetection tube with a lid and cathode holding member in thermal contact with a cooler | Electricity | 6 | Expired |
| US7867800B2 | Light-emitting semiconductor device using group III nitrogen compound | Electricity | 4 | Active |
| US7115854B1 | Photomultiplier and photodetector including the same | Electricity | 4 | Expired |
| US6472690B1 | Gallium nitride group compound semiconductor | Electricity | 4 | Expired |
| US6617787B2 | Light-emitting system with alicyclic epoxy sealing member | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.