Light-emitting semiconductor device using gallium nitride group compound
US5281830A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 24, 1991 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Oct 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, where 0.ltoreq.x<1) comprises an n-layer; a p-layer which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, the p-layer joining to the n-layer; a first electrode for the n-layer so as to join to the n-layer, passing through a hole formed in the p-layer which extends from the p-layer to the n-layer; and a second electrode for the p-layer which is formed in a region which is separated by a groove formed in the p-layer so as to extend from the upper surface of the p-layer to said n-layer. An LED comprises an n-layer; an i-layer doped with p-type impurities, the i-layer joining to the n-layer; a first electrode for said n-layer so as to join to the n-layer, passing through a hole formed in the i-layer which extends from the upper surface of the i-layer to the n-layer; a p-type part in a specific region in the i-layer which is converted into p-type conduction by irradiating with electron rays, the p-type part being formed such that said first electrode is insulated and separated by the i-laye…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.