Transistor antifuse for a programmable ROM
US5282158A · kind A · utility
63Cited by
6References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 21, 1992 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Aug 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A programmable read-only memory device and method of fabrication are disclosed having an antifuse in the drain node of a field effect transistor. Programming is accomplished by imposing a high voltage on the transistor drain and gate which causes the antifuse to be a closed circuit; otherwise, the transistor appears as an open circuit. Locating the antifuse in the drain node as opposed to the source node avoids problems of source reverse bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.