Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
US5286344A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1992 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Jun 15, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
More specifically, a process is provided for etching a multilayer structure to form a predetermined etched pattern therein. The subject process comprises providing the multilayer structure having a plurality of structural layers. The structural layers of the multilayer structure comprise a silicon dioxide outer layer on an underlying silicon nitride stop layer. Then, a chemical etchant protective layer is formed on a major surface of the multilayer structure having a predetermined pattern of openings, thereby exposing areas of the silicon dioxide outer layer corresponding to the predetermined pattern of openings. The exposed areas of the silicon dioxide outer layer are then etched down to the silicon nitride stop layer, at a high SiO.sub.2 etch rate and at a high level of selectivity of the SiO.sub.2 etch rate with respect to the Si.sub.3 N.sub.4 etch rate, with a fluorinated chemical etchant system. The fluorinated chemical etchant system includes an etchant material and an additive material. The additive material comprises a fluorocarbon material in which the number of hydrogen atoms is equal to or greater than the number of fluorine atoms. The etching step forms a substantially …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.