Fred L. Roe
6Patents
6h-index
3Co-inventors
52Inventor score
Filing activity: May 15, 1992 → Aug 6, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5286344A | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride | Electricity | 151 | Expired |
| US5302238A | Plasma dry etch to produce atomically sharp asperities useful as cold cathodes | Electricity | 65 | Expired |
| US7049244B2 | Method for enhancing silicon dioxide to silicon nitride selectivity | Electricity | 59 | Expired |
| US5302239A | Method of making atomically sharp tips useful in scanning probe microscopes | Electricity | 55 | Expired |
| US6015760A | Method for enhancing oxide to nitride selectivity through the use of independent heat control | Electricity | 10 | Expired |
| US6287978A | Method of etching a substrate | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.