Method of making a mushroom-shaped gate electrode of semiconductor device
US5288654A · kind A · utility
20Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1993 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Feb 8, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.