Plasma etching apparatus
US5290381A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 27, 1991 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Nov 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.