Method of forming silicon carbide
US5296258A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1992 |
| Grant date | Mar 22, 1994 |
| Priority date | — |
| Expiry date | Sep 30, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A low temperature CVD method is provided for depositing high quality stoichiometric, poly-crystalline silicon carbide films and for depositing emitter quality, heavily doped silicon carbide films, suitable for application in silicon hetero-junction bipolar transistors. The process is compatible with bipolar-CMOS device processing and comprises pyrolysis of di-tert-butyl silane in an oxygen free ambient, with n-type doping provided by phosphorus source comprising tert-butyl phosphine. Advantageously oxygen is excluded from the reactant gas mixture and the method includes pre-cleaning the susbtrate with nitrogen trifluoride and passivating the silicon carbide film with fluorine species from nitrogen trifluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.