Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5298442A · kind A · utility
62Cited by
10References
24Claims
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Key dates
| Filing date | Sep 18, 1991 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Sep 18, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
Abstract
Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using special procedures for growth of gate oxide at various trench corners.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.