Method of etching object to be processed including oxide or nitride portion
US5302236A · kind A · utility
32Cited by
6References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 18, 1991 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Oct 18, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to this invention, a semiconductor wafer on which an oxide or nitride film is formed is loaded in a processing vessel, and when the oxide or nitride film of the semiconductor wafer is to be etched by a plasma of CHF.sub.3 gas in the processing vessel, CO gas is present in the plasma atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.