Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
US5302238A · kind A · utility
65Cited by
17References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1992 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | May 15, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30403
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An in situ plasma dry etching process for the formation of automatically sharp cold cathode emitter tips for use in field emission displays in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the emitter tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp electron emitter tips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.