Method of making atomically sharp tips useful in scanning probe microscopes
US5302239A · kind A · utility
55Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1992 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | May 15, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An in situ plasma dry etching process for the formation of atomically sharp tips for use in high resolution microscopes in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp microscope tips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.