Method of manufacturing semiconductor device
US5302240A · kind A · utility
98Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1993 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Feb 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.