Systems for patterning dielectrics by laser ablation
US5302547A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1993 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Feb 8, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A differentiable ablation approach to patterning dielectrics which are not of the same absorbance uses an absorbant dielectric at a specified laser wavelength over a non-absorbant dielectric at that wavelength. The absorbant dielectric may be laser-patterned and become an integral mask enabling plasma etching of the underlying non-absorbant dielectric. If the patterning of the absorbant dielectric involves vias, polymer ridges formed around via surfaces during laser patterning may be removed at the same time the underlying non-absorbant dielectric is etched using a transparent, oxygen plasma resistant mask. Alternatively, an inert mask may be used instead of the absorbant dielectric to allow plasma etching of the non-absorbant dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.