Method for pulling up semiconductor single crystal
US5306387A · kind A · utility
12Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1991 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Jun 12, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/305
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the rotational speed of said quartz crucible at a level exceeding 5 rpm and varying the intensity of said magnetic field applied to said molten semiconductor according to the length of pull of said single crystal rod.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.