Semiconductor photolithography with superficial plasma etch
US5310621A · kind A · utility
4Cited by
1References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 6, 1992 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | May 6, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/09
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithographic process involves the use of plasma to effect a superficial etch of a semiconductor wafer prior to the application of photoresist. Photoresist is applied directly on the wafer, without using an adhesion promotor. The photoresist is then exposed to patterned light. After exposure, the photoresist is developed leaving the desired photoresist mask on the wafer. Due to the superficial etch, curling of the photoresist is minimized, enhancing the selective protection provided by the photoresist to the wafer below.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.