Method of making a field emitter device using randomly located nuclei as an etch mask
US5312514A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 1993 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Apr 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Method of making a field emitter device with submicron low work function emission tips without using photolithography. The method includes depositing in situ by evaporating or sputtering a discontinuous etch mask comprising randomly located discrete nuclei. In one embodiment an ion etch is applied to a low work function material covered by a discontinuous mask to form valleys in the low work function material with pyramid shaped emission tips therebetween. In another embodiment an ion etch is applied to an electrically conductive base material covered by a discontinuous mask to form valleys in the base material with pyramid shaped base tips therebetween. The base material is then coated with a low work function material to form emission tips thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.