Organometallic tellurium compounds useful in chemical vapor deposition processes
US5312983A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 1991 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Feb 15, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Novel tellurium compounds of the present invention have the formula: EQU TeR.sup.1 R.sup.2 wherein R.sup.1 is a fluorinated alkyl having the formula C.sub.n F.sub.(2n+1)-x H.sub.x where n may range from 1 to 6 and x may range from 0 to 2n, and R.sup.2 is selected from the group consisting of alkyls having 2 to 6 carbon atoms, cycloalkyls having 3 to 6 carbon atoms, allyl, alkyl-substituted allyl having 4 to 6 carbon atoms, cyclopentadienyl, benzyl, alpha-methylbenzyl, and bis(alpha-methyl)benzyl. The novel tellurium reagents are useful as sources for organometallic vapor deposition processes, particularly the MOCVD fabrication of II-VI semiconductor materials such as Hg.sub.x Cd.sub.1-x Te. The compounds are synthesized by high yield ligand exchange reactions between Te(R.sup.1).sub.2 and Te(R.sup.2).sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.