Memory circuit with pumped voltage for erase and program operations
US5313429A · kind A · utility
53Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1992 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Feb 14, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device is disclosed that employs hot electron injection for programming operations and Fowler-Nordheim tunneling for erase operations. The memory device requires only a single 5 volt power supply and does not require an external high voltage supply for program or erase operations. The memory device includes a charge pump section that internally generates the high voltage required for programming and erase operations. The same charge pump section is used for both program and erase power requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.