Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber
US5314603A · kind A · utility
91Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Jul 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actual RF power to be applied to one of the electrodes in the process chamber. A controller controls the RF power output from the RF power supply to a predetermined value in accordance with the actual RF power detected by the power detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.