Field effect transistor having a gate dielectric with variable thickness
US5314834A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1991 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Aug 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A field effect transistor, FET, (11) having a gate dielectric of varying thickness (14, 24) to improve device performance. The FET (11) is made on a substrate (10) and has a control electrode, or gate (16), and two current electrodes, or source and drain regions (28), which are separated by a channel region. The gate (16) is separated from the channel region by a gate dielectric. The gate dielectric has a centrally located first region that is of a first thickness (14) and a second region which is adjacent a perimeter of the first region that is of a second thickness (24). The second thickness (24) is made greater than the first thickness (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.