Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof
US5319657A · kind A · utility
27Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Oct 8, 1992 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Oct 8, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.