Field emission structures produced on macro-grain polysilicon substrates
US5329207A · kind A · utility
95Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | May 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30407
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.