Method of fabricating BiCMOS device
US5338696A · kind A · utility
30Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Mar 1, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wraparound silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.