Blue light-emitting diode with degenerate junction structure
US5338944A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Sep 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.