AC drain voltage charging source for PROM devices
US5339270A · kind A · utility
14Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 23, 1993 |
| Grant date | Aug 16, 1994 |
| Priority date | — |
| Expiry date | Jun 23, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a programmable read only memory (PROM) is useful for a PROM which has a source, a drain and a control gate. A DC signal is placed on the control gate. For example, the DC signal has a voltage of approximately 5 volts. An AC signal is placed on the drain. The AC signal, for example, oscillates between approximately 0 volts and 5 volts and has a frequency of at least 100 Megahertz. As a result, charges tunnel through a tunnel oxide region to an floating gate, thus programming the PROM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.