Process for producing silicon single crystal
US5340434A · kind A · utility
6Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Feb 1, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.