Low resistance device element and interconnection structure
US5341016A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Jun 16, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite semiconductor structure which replaces polysilicon for conductive device elements and provides lower resistance interconnections between devices. The preferred structure is a conductive adhesion layer deposited in place of polysilicon in contact with a conductive metal layer traversing the interconnection. The preferred material for the adhesion layer is tungsten nitride, and for the metal layer--tungsten. If polysilicon is retained for device elements, the adhesion and metal layers may be placed in contact with the polysilicon element and along the interconnect structure providing an interconnect with lower resistance. Increased adhesion may be obtained by adding a cap layer of dielectric material atop the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.