Plasma processing apparatus
US5342472A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1992 |
| Grant date | Aug 30, 1994 |
| Priority date | — |
| Expiry date | Aug 12, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Microwave inlet ports are formed on a microwave transmission window above a plasma generation chamber. The distance from the microwave inlet ports to a support surface of a wafer support table is set to be an integer multiple of 1/2 the wavelength of the microwave. Upper and lower magnetic poles opposite to each other are arranged above and below the chamber to form a magnetic field having a uniform strength in the chamber. The strength of the magnetic field is set to be 865 Gauss as a value slightly deviating from 875 Gauss as a value satisfying ideal conditions of an electron cyclotron resonance at a microwave wavelength of 2.45 GHz. The electron energy is suppressed, and damage to the surface of a wafer can be suppressed in wafer surface processing using a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.