Magnetic field enhanced plasma processing chamber
US5346579A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1993 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | Jul 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etch reactor comprising a remote source of plasma mounted on a vacuum processing chamber has a large permanent magnet ring around the area of the chamber where the plasma enters, magnetically oriented so that magnetic field lines are removed from said plasma in the processing chamber, and two or more pairs of magnet rings mounted around said chamber to form a series of magnetic cusps about the wall of said chamber, to thereby inhibit plasma electrons from striking the wall of said chamber. A substrate entry port can be fitted between the magnet rings, allowing automatic ingress and egress of said substrates with maximum efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.